Мрвић Ј, Вукић В. Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors. Zb EI Nikola Tesla [Internet]. 2020 Dec. 28 [cited 2026 Jul. 12];30(30):93-109. Available from: https://asistent.ceon.rs/index.php/zeint/article/view/29318