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Vol. 15 No. 1 (2017)
Vol. 15 No. 1 (2017)

TRIZ AND HDC SAPPHIRE GROWTH PROCESS

DOI: 10.5937/jaes15-11917
Štefan Medvecký
Faculty of Mechanical Engineering, University of Žilina
Miroslav Mikita
CEIT Company
Michal Hoc
Institute of Competitiveness and Innovations
Juraj Kajan
Faculty of Mechanical Engineering, University of Žilina
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Published

2017-03-08

Section

Original Scientific Paper

How to Cite

[1]
Štefan Medvecký, M. Mikita, M. Hoc, and J. Kajan, “TRIZ AND HDC SAPPHIRE GROWTH PROCESS”, JAES, vol. 15, no. 1, Mar. 2017, doi: 10.5937/jaes15-11917.
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Abstract

The application of Theory of Inventive Problem Solving (TRIZ) into sapphire single crystal growth process provided thorough analysis of a problem as well as introduced two conceptually new solutions. The innovation of the Bagdasarov – Horizontally Directed Crystallization (HDC) by resolving the pollution of the observation window improves the control over the process. The increased accuracy of the control leads to supreme quality of the resultant sapphire single crystal. The ultimate goal of betterment is the complete automation of the growth process.

Keywords

Innovation
Automation
HDC Bagdasarov method
Sapphire single crystal
TRIZ
DOI: 10.5937/jaes15-11917
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